ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

被引：0

作者：

NAKAMURA, K ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, TOKYO, JAPAN

来源：

NEC RESEARCH & DEVELOPMENT | 1974年 / 33期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 37

页数：9

共 19 条

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[3]

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[8] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

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[10] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J].

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