ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS

被引：17
作者：
DEGEN, PL [1 ]
机构：
[1] BRUNEL UNIV,UXBRIDGE,MIDDLESEXSHIRE,ENGLAND
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 01期
关键词：
D O I：
10.1002/pssa.2210160102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：9 / 42
页数：34
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