ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS

被引：17
作者：
DEGEN, PL [1 ]
机构：
[1] BRUNEL UNIV,UXBRIDGE,MIDDLESEXSHIRE,ENGLAND
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 01期
关键词：
D O I：
10.1002/pssa.2210160102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：9 / 42
页数：34
相关论文
共 94 条
[21]   ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GAP [J].
DAVEY, JE ;
PANKEY, T ;
MALMBERG, PR ;
LUCKE, WH .
APPLIED PHYSICS LETTERS, 1970, 17 (08) :323-&
[22]   IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].
DEARNALEY, G ;
FREEMAN, JH ;
GARD, GA ;
WILKINS, MA .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :587-+
[23]   ION BOMBARDMENT AND IMPLANTATION [J].
DEARNALEY, G .
REPORTS ON PROGRESS IN PHYSICS, 1969, 32 (04) :405-+
[24]  
DEARNALEY G, 1970, 1969 P INT C AT COLL
[25]  
DEARNALEY G, 1970, 1970 P EUR C ION IMP, P162
[26]   TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION [J].
DONNELLY, JP ;
FOYT, AG ;
HINKLEY, ED ;
LINDLEY, WT ;
DIMMOCK, JO .
APPLIED PHYSICS LETTERS, 1968, 12 (09) :303-&
[27]   MIS ELECTROLUMINESCENT DIODES IN ZNTE [J].
DONNELLY, JP ;
FOYT, AG ;
LINDLEY, WT ;
ISELER, GW .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :755-&
[28]  
DUNLAP HL, 1969, NAS12124 HUGH RES LA
[29]  
ELDRIDGE G, 1970, 1970 P EUR C ION IMP, P143
[30]   THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J].
FANE, RW ;
GOSS, AJ .
SOLID-STATE ELECTRONICS, 1963, 6 (04) :383-387
12345678910