ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS

被引：17
作者：
DEGEN, PL [1 ]
机构：
[1] BRUNEL UNIV,UXBRIDGE,MIDDLESEXSHIRE,ENGLAND
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 01期
关键词：
D O I：
10.1002/pssa.2210160102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：9 / 42
页数：34
相关论文
共 94 条
[1]  
ALLEN RM, 1970, 1970 P EUR C ION IMP, P127
[2]  
Anderson W. W., 1968, SOLID STATE ELECTRON, V11, P481
[3]  
ANDERSON WW, 1968, APPL PHYS LETTERS, V12, P339
[4]  
ARNOLD GW, 1972, 2 P INT C ION IMPL S
[5]  
AVEN M, 1967, PHYSICS CHEMISTRY 2
[6]   CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON [J].
BADER, R ;
KALBITZER, S .
APPLIED PHYSICS LETTERS, 1970, 16 (01) :13-+
[7]   HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES [J].
BEHRNDT, KH .
SOLID-STATE ELECTRONICS, 1971, 14 (03) :191-&
[8]   FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J].
BORDERS, JA ;
PICRAUX, ST ;
BEEZHOLD, W .
APPLIED PHYSICS LETTERS, 1971, 18 (11) :509-&
[9]   DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J].
BOWER, RW ;
BARON, R ;
MAYER, JW ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1966, 9 (05) :203-&
[10]  
BOWER RW, 1966, P INT M ELECTRON DEV
12345678910