INSB1-XBIX FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：41

作者：

OE, K

ANDO, S

SUGIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 04期

关键词：

D O I：

10.1143/JJAP.20.L303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L303 / L306

页数：4

相关论文

共 6 条

[1] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[2] GROWTH OF INSB1-XBIX SINGLE-CRYSTALS BY CZOCHRALSKI METHOD [J].

JOUKOFF, B ;

JEANLOUI.AM .

JOURNAL OF CRYSTAL GROWTH, 1972, 12 (02) :169-&

[3]

NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2

[4] RHEED STUDY OF INSB FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

OE, K ;

ANDO, S ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L417-L420

[5] GROWTH AND PHASE-STABILITY OF EPITAXIAL METASTABLE INSB1-XBIX FILMS ON GAAS .1. CRYSTAL-GROWTH [J].

ZILKO, JL ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1549-1559

[6]

ZILKO JL, 1980, J APPL PHYS, V51, P1560, DOI 10.1063/1.327808