SILICIDE FORMATION AT LOW-TEMPERATURES BY METAL-SIO2 INTERACTION

被引：19

作者：

KRAUTLE, H ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 20卷 / 01期

关键词：

D O I：

10.1002/pssa.2210200152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K33 / K36

页数：4

共 13 条

[1]

BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[2] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[3]

CHU WK, 1973, SEMICONDUCTOR SILICO

[4] INTERDIFFUSION AND COMPOUND FORMATION IN THIN FILMS OF PD OR PT ON SI SINGLE CRYSTALS [J].

DROBEK, J ;

SUN, RC ;

TISONE, TC .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (01) :243-+

[5]

ELLIOTT RP, 1965, CONSTITUTION BINAR S, P5430

[6] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J].

HIRAKI, A ;

LUGUJJO, E ;

NICOLET, MA ;

MAYER, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02) :401-&

[7]

KRAUTLE H, 1973, FEB IND ASS C

[8]

LAU SS, PRIVATE COMMUNICATIO

[9]

MEYER O, 1973, VERHANDL DPG, V3, P517

[10] DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEM [J].

NARUSAWA, T ;

KOMIYA, S ;

HIRAKI, A .

APPLIED PHYSICS LETTERS, 1973, 22 (08) :389-390

← 1 2 →