GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS

被引：180

作者：

HAYASHI, I

PANISH, MB

REINHART, FK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 05期

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D O I：

10.1063/1.1660469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1929 / &

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[1] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289
[3] ALFEROV ZI, 1969, TRUKAN FIZ TEKH POLU, V3, P1328
[4] LINE SHAPE IN GAAS INJECTION LASERS
BURNS, G
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 471 - &
[5] DIFFUSION AND OXIDE MASKING IN SILICON BY THE BOX METHOD
DASARO, LA
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 3 - &
[6] DOUSMANIS CG, 1964, APPL PHYS LETT, V5, P176
[7] OPTIMUM STRIP WIDTH FOR CONTINUOUS OPERATION OF GAAS JUNCTION LASERS
DYMENT, JC
RIPPER, JE
ZACHOS, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1802 - +
[8] GAIN AND LOSS PROCESSES IN GAALAS-GAAS HETEROSTRUCTURE LASERS
GOODWIN, AR
SELWAY, PR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) : 285 - &
[9] SUPERLINEAR DEPENDENCE OF GAIN ON CURRENT DENSITY IN GAAS INJECTION LASERS
GOODWIN, AR
THOMPSON, GH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) : 311 - &
[10] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER
HAYASHI, I
PANISH, MB
FOY, PW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 211 - &

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