UNUSUALLY LOW RESISTIVITY OF COPPER-GERMANIDE THIN-FILMS FORMED AT LOW-TEMPERATURES

被引：71

作者：

KRUSINELBAUM, L

ABOELFOTOH, MO

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.104304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200-degrees-C. At these low temperatures, the epsilon-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5-mu-OMEGA cm. The films are electrically stable up to at least 600-degrees-C, and, unlike pure copper, are also stable against oxygen and air exposure.

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页码：1341 / 1343

页数：3

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