UNUSUALLY LOW RESISTIVITY OF COPPER-GERMANIDE THIN-FILMS FORMED AT LOW-TEMPERATURES

被引：71

作者：

KRUSINELBAUM, L

ABOELFOTOH, MO

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.104304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200-degrees-C. At these low temperatures, the epsilon-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5-mu-OMEGA cm. The films are electrically stable up to at least 600-degrees-C, and, unlike pure copper, are also stable against oxygen and air exposure.

引用

页码：1341 / 1343

页数：3

共 20 条

[1] SCHOTTKY-BARRIER BEHAVIOR OF COPPER AND COPPER SILICIDE ON N-TYPE AND P-TYPE SILICON
ABOELFOTOH, MO
CROS, A
SVENSSON, BG
TU, KN
[J]. PHYSICAL REVIEW B, 1990, 41 (14): : 9819 - 9827
[2] XPS, AUGER STUDY OF CU3SI AND ITS REACTION WITH OXYGEN
BANHOLZER, WF
BURRELL, MC
[J]. SURFACE SCIENCE, 1986, 176 (1-2) : 125 - 133
[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
ZIRINSKY, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
[4] The conductivity of thin metallic films according to the electron theory of metals
Fuchs, K
[J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 : 100 - 108
[5] HANSEN M, 1986, BINARY ALLOY PHASE D, V1, P919
[6] SPECULAR BOUNDARY SCATTERING AND ELECTRICAL TRANSPORT IN SINGLE-CRYSTAL THIN-FILMS OF COSI2
HENSEL, JC
TUNG, RT
POATE, JM
UNTERWALD, FC
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1840 - 1843
[7] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS
HENSEL, JC
TUNG, RT
POATE, JM
UNTERWALD, FC
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915
[8] ELECTRONIC TRANSPORT-PROPERTIES OF TANTALUM DISILICIDE THIN-FILMS
HUANG, MT
MARTIN, TL
MALHOTRA, V
MAHAN, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 836 - 845
[9] EFFECTS OF DEPOSITION METHODS ON THE TEMPERATURE-DEPENDENT RESISTIVITY OF TUNGSTEN FILMS
KRUSINELBAUM, L
AHN, K
SOUK, JH
TING, CY
NESBIT, LA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06): : 3106 - 3110
[10] CHARACTERIZATION OF REACTIVELY SPUTTERED RUTHENIUM DIOXIDE FOR VERY LARGE-SCALE INTEGRATED METALLIZATION
KRUSINELBAUM, L
WITTMER, M
YEE, DS
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1879 - 1881

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