HIGHLY STABLE MICROWAVE PERFORMANCE OF INP INGAAS HIGFETS

被引：4

作者：

MARTIN, EA ^{[1
]}

AINA, OA ^{[1
]}

ILIADIS, AA ^{[1
]}

MATTINGLY, MR ^{[1
]}

HEMPFLING, E ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期

关键词：

D O I：

10.1109/16.57144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and microwave performance of InP/InGaAs Heterojunction Insulated-Gate FET’s (HIGFET’s) using PECVD-deposited SiO2 as the gate insulator. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under dc bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFET’s ideal candidates for microwave power applications. © 1990 IEEE

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页码：1916 / 1917

页数：2

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