(ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引:193
作者
FUKUI, T
SAITO, H
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词
D O I
10.1116/1.584224
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1373 / 1377
页数:5
相关论文
共 12 条
[1]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[2]   ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].
ASAI, H .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433
[3]   OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J].
CIBERT, J ;
PETROFF, PM ;
DOLAN, GJ ;
PEARTON, SJ ;
GOSSARD, AC ;
ENGLISH, JH .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1275-1277
[4]   (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD [J].
FUKUI, T ;
SAITO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L521-L523
[5]   (ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FUKUI, T ;
SAITO, H .
APPLIED PHYSICS LETTERS, 1987, 50 (13) :824-826
[6]  
HIRAYAMA Y, 1986, SURF SCI, V174, P198
[7]  
Kossel W., 1927, NACHR GES WISS GOTT, P135
[8]   TOWARD QUANTUM WELL WIRES - FABRICATION AND OPTICAL-PROPERTIES [J].
PETROFF, PM ;
GOSSARD, AC ;
LOGAN, RA ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :635-638
[9]   STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :620-622