共 10 条
[1]
PHOTOVOLTAIC EFFECTS IN TEMPERATURE-DEPENDENT FERMI-LEVEL MOVEMENT FOR GAAS(110)
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PHYSICAL REVIEW B,
1990, 41 (09)
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[2]
CALCULATED PHOTOCURRENTS AND SURFACE-BARRIER HEIGHTS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1992, 10 (03)
:493-496
[4]
CONFIRMATION OF THE TEMPERATURE-DEPENDENT PHOTOVOLTAIC EFFECT ON FERMI-LEVEL MEASUREMENTS BY PHOTOEMISSION SPECTROSCOPY
[J].
PHYSICAL REVIEW B,
1990, 41 (17)
:12299-12302
[5]
ULTRAFAST TIME RESOLUTION IN SCANNED PROBE MICROSCOPES - SURFACE PHOTOVOLTAGE ON SI(111)-(7X7)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (02)
:514-518
[6]
TIME-DEPENDENCE OF PHOTOVOLTAIC SHIFTS IN PHOTOELECTRON-SPECTROSCOPY OF SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1991, 43 (14)
:12102-12105
[7]
ROLE OF PHOTOCURRENT IN LOW-TEMPERATURE PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION
[J].
PHYSICAL REVIEW B,
1990, 41 (11)
:7918-7921
[9]
SYNCHROTRON-RADIATION-INDUCED SURFACE PHOTOVOLTAGE ON GAAS STUDIED BY CONTACT-POTENTIAL-DIFFERENCE MEASUREMENTS
[J].
PHYSICAL REVIEW B,
1990, 42 (05)
:3228-3230
[10]
Sze S. M., 1981, PHYS SEMICONDUCTOR D, V2nd ed.