ATOMIC-RESOLUTION IMAGING OF ZNSSE(110) SURFACE WITH ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE (UHV-AFM)

被引：8

作者：

SUGAWARA, Y

OHTA, M

UEYAMA, H

MORITA, S

机构：

[1] Department of Physics, Hiroshima University, Higashi-Hiroshima, Hiroshima

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4A期

关键词：

ZNSSE; ZNSE; COMPOUND SEMICONDUCTOR; ATOMIC FORCE MICROSCOPE; ULTRAHIGH VACUUM;

D O I：

10.1143/JJAP.34.L462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-resolution imaging of a ZnSSe(110) surface grown by molecular beam epitaxy on a GaAs substrate was demonstrated for the first time with an ultrahigh-vacuum atomic force microscope (UHV-AFM.). A rectangular lattice with spacing of 5.6+/-0.6 Angstrom and 4.0+/-0.4 Angstrom is resolved. This result suggests that the UHV-AFM has potential to image the group II-VI compound semiconductor surfaces having dangling bonds, on an atomic scale.

引用

页码：L462 / L464

页数：3

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