ATOMIC-RESOLUTION IMAGING OF ZNSSE(110) SURFACE WITH ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE (UHV-AFM)

被引：8
作者：
SUGAWARA, Y
OHTA, M
UEYAMA, H
MORITA, S
机构：
[1] Department of Physics, Hiroshima University, Higashi-Hiroshima, Hiroshima
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4A期
关键词：
ZNSSE; ZNSE; COMPOUND SEMICONDUCTOR; ATOMIC FORCE MICROSCOPE; ULTRAHIGH VACUUM;
D O I：
10.1143/JJAP.34.L462
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic-resolution imaging of a ZnSSe(110) surface grown by molecular beam epitaxy on a GaAs substrate was demonstrated for the first time with an ultrahigh-vacuum atomic force microscope (UHV-AFM.). A rectangular lattice with spacing of 5.6+/-0.6 Angstrom and 4.0+/-0.4 Angstrom is resolved. This result suggests that the UHV-AFM has potential to image the group II-VI compound semiconductor surfaces having dangling bonds, on an atomic scale.
引用
收藏
页码：L462 / L464
页数：3
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