IMPURITY INTRODUCTION DURING EPITAXIAL GROWTH OF SILICON

被引：10

作者：

GLANG, R

KIPPENHAN, BW

机构：

来源：

关键词：

D O I：

10.1147/rd.43.0299

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：299 / 301

页数：3

共 6 条

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DEBYE, PP ;

KOHANE, T .

PHYSICAL REVIEW, 1954, 94 (03) :724-725

[2] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

[3] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[4]

QUILL LL, 1950, 6 MCGRAW HILL BOOK C, P76

[5]

SMITS FM, 1958, P IRE, V46, P1055

[6] EPITAXIAL GROWTH OF SILICON [J].

WAJDA, ES ;

KIPPENHAN, BW ;

WHITE, WH .