SCATTERING OF HOT-ELECTRONS IN N-TYPE INSB AT LOW-TEMPERATURES

被引：0

作者：

GERSHENZON, EM ^{[1
]}

ILIN, VA ^{[1
]}

LITVAKGO.LB ^{[1
]}

RABINOVICH, RI ^{[1
]}

SHAPIRO, EZ ^{[1
]}

机构：

[1] VI LENIN STATE PEDAGOGICAL INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1626 / 1630

页数：5

共 22 条

[1]

Bannaya V. F., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P200

[2]

BANNAYA VF, 1970, SOV PHYS SEMICOND+, V4, P159

[3] EFFETS DES HAUTS CHAMPS ELECTRIQUES SUR LES PHENOMENES DE TRANSPORT DANS INSB A BASSE TEMPERATURE [J].

BOK, J ;

GUTHMANN, C .

PHYSICA STATUS SOLIDI, 1964, 6 (03) :853-862

[4]

GERSHENZ.EM, 1970, FIZ TVERD TELA+, V12, P571

[5]

GERSHENZON EM, 1972, FIZ TEKH POLUPROV, V6, P1888

[6] HIGH ELECTRIC FIELD EFFECTS IN N-INDIUM ANTIMONIDE [J].

GLICKSMAN, M ;

STEELE, MC .

PHYSICAL REVIEW, 1958, 110 (05) :1204-1205

[7]

Gribnikov Z. S., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V58, P1046

[8]

GRIBNIKOV ZS, 1970, SOV PHYS JETP-USSR, V31, P562

[9]

GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211

[10] SCATTERING MECHANISMS IN INDIUM ANTIMONIDE AT LOW TEMPERATURES [J].

KINCH, MA .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (10) :1257-&

← 1 2 3 →