ELECTRONIC-STRUCTURE OF BETA-FESI2

被引：414

作者：

CHRISTENSEN, NE ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.42.7148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio calculations of the electronic structure of -FeSi2 show that this material, in agreement with experiment, is a semiconductor. The calculated hole and electron masses of the band-edge states are 0.8m0. A particularly strong coupling of the band-edge states to the lattice is suggested. This may cause the mobilities, even in pure -FeSi2 samples, to be very low at ambient temperature. © 1990 The American Physical Society.

引用

页码：7148 / 7153

页数：6

共 35 条

[1]

ABIKOSOV NK, 1956, IZV SEKT FIZ KHIM AN, V27, P157

[2] THEORY OF SEMICONDUCTOR-TO-METAL TRANSITIONS [J].

ADLER, D ;

BROOKS, H .

PHYSICAL REVIEW, 1967, 155 (03) :826-+

[3] LINEAR METHODS IN BAND THEORY [J].

ANDERSEN, OK .

PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083

[4] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[5] MECHANISM OF ELECTRICAL CONDUCTION IN BETA-FESI2 [J].

BIRKHOLZ, U ;

SCHELM, J .

PHYSICA STATUS SOLIDI, 1968, 27 (01) :413-&

[6] ELECTRICAL INVESTIGATION OF SEMICONDUCTOR-TO-METAL TRANSITION IN FESI2 [J].

BIRKHOLZ, U ;

SCHELM, J .

PHYSICA STATUS SOLIDI, 1969, 34 (02) :K177-+

[7]

BIRKHOLZ U, 1970, 10TH P INT C PHYS SE, P311

[8] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[9]

CARDONA M, IN PRESS

[10]

CARDONA M, 1987, PHYS REV B, V35, P9174

← 1 2 3 4 →