SURFACE-ANALYSIS OF CUBIC SILICON-CARBIDE (001)

Cubic beta-SiC(001) surfaces were cleaned in ultra-high vacuum by heating within a Si atomic flux, allowing contaminant species to desorb while continuously replenishing volatile surface Si. Using this technique, surface compositions ranging from Si-rich to Si-deficient were prepared. Surfaces were subsequently characterized using Auger electron, electron energy loss, X-ray photoelectron, and ultraviolet photoelectron spectroscopies as well as low energy electron diffraction. Data are presented for a range of surface compositions which result in formation of several reconstructions: (3 x 1), c(4 x 2), (2 x 1), c(2 x 2), and (1 x 1). Results are interpreted based on surface models which include ordered arrays of surface Si dimers for Si-rich and Si-terminated surfaces and graphite formation for Si-deficient surfaces.