X-RAY-EFFECTS ON CATION IMPURITY-VACANCY PAIRS IN KCL-EU2+

被引:34
作者
KAO, KJ
PERLMAN, MM
机构
[1] Groupe de Recherches sur les Semiconducteurs et les Diélectriques, Départment de Physique, Collège Militaire Royal de Saint-Jean, Saint-Jean, Qué.
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 02期
关键词
D O I
10.1103/PhysRevB.19.1196
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
X-ray irradiation of KCl: Eu2+ at room temperature destroyed impurity-vacancy (I-V) dipoles, converted the doubly valent impurity ion to a singly valent state, and created defect centers, e.g., F centers and a 220-nm optical-absorption band. Eu+ produced by the irradiation was observed to grow in proportion to the destruction of Eu2+. The 220-m band was also observed to grow approximately in proportion to the height of the F band, in agreement with previous workers. The number of dipoles destroyed was equal to or exceeded the sum of the number of converted ions and the number of F centers produced. A possible explanation of these results is that x rays increase the rate of aggregation of dipoles. It is likely that it is the cation vacancies bound in I-V dipoles that are converted to anion vacancies which later form F centers. © 1979 The American Physical Society.
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页码:1196 / 1202
页数:7
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