EVIDENCE FOR A REDUCTION IN THE MOMENTUM MATRIX ELEMENT P2 DUE TO ALLOY DISORDER IN INAS1-XPX

被引：25
作者：
NICHOLAS, RJ
STRADLING, RA
RAMAGE, JC
机构：
[1] Clarendon Laboratory, Oxford OX1 3PU, Parks Road
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 09期
关键词：
D O I：
10.1088/0022-3719/12/9/007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Measurements of cyclotron resonance and the infrared absorption in the region of the direct band gap are reported for the complete range of alloys InAs1-xPx. The experimentally determined values of the effective mass are found to be almost linear functions of the alloy composition. This is in contrast to the predictions of k.p theory which, using a linear interpolation of the momentum matrix element (P2) between the values for the two alloy constituents, predicts a strong bowing. The discrepancy is thought to arise from a reduction in P2 brought about by a mixing of the conduction and valence bands by random local disorder.
引用
收藏
页码：1641 / 1651
页数：11
相关论文
共 38 条
[1]   SPONTANEOUS + STIMULATED INFRA-RED EMISSION FROM INDIUM PHOSPHIDE ARSENIDE DIODES ( IN )P AS) DIODES SPONTANEOUS + STIMULATED INFRARED EMISSION 77 DEGREES K E ) [J].
ALEXANDER, FB ;
CARPENTER, DR ;
RILEY, RJ ;
QUINN, HF ;
MANLEY, GW ;
YETTER, LR ;
BIRD, VR ;
PELOKE, JR ;
MCDERMOTT, PS .
APPLIED PHYSICS LETTERS, 1964, 4 (01) :13-&
[2]   ELECTRON EFFECTIVE-MASS VALUES IN GAXIN1-XSB ALLOYS [J].
AUBIN, MJ ;
THOMAS, MB ;
VANTONGE.EH ;
WOOLLEY, JC .
CANADIAN JOURNAL OF PHYSICS, 1969, 47 (06) :631-+
[3]   ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J].
BALDERESCHI, A ;
HESS, E ;
MASCHKE, K ;
NEUMANN, H ;
SCHULZE, KR ;
UNGER, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4709-4717
[4]   BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X [J].
BALDERESCHI, A ;
MASCHKE, K .
SOLID STATE COMMUNICATIONS, 1975, 16 (01) :99-102
[5]   EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J].
BEROLO, O ;
WOOLLEY, JC ;
VANVECHT.JA .
PHYSICAL REVIEW B, 1973, 8 (08) :3794-3798
[6]  
BEROLO O, 1972, 11TH P INT C PHYS SE, P1420
[7]   FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J].
CARDONA, M ;
GREENAWAY, DL .
PHYSICAL REVIEW, 1963, 131 (01) :98-+
[8]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[9]  
CHAMBERLAIN JM, 1971, J PHYS C, V41, pL38
[10]   OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].
DIXON, JR ;
ELLIS, JM .
PHYSICAL REVIEW, 1961, 123 (05) :1560-&
1234