EFFECTS OF VARIOUS DOPING ELEMENTS ON TRANSITION TEMPERATURE OF VANADIUM OXIDE SEMICONDUCTORS

被引：70
作者：
FUTAKI, H
AOKI, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 08期
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D O I：
10.1143/JJAP.8.1008
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1008 / &
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共 29 条
[1]   SEMICONDUCTOR-TO-METAL TRANSITION IN V2O3 [J].
ADLER, D ;
FEINLEIB, J .
PHYSICAL REVIEW LETTERS, 1964, 12 (25) :700-+
[2]   SEMICONDUCTOR-TO-METAL TRANSITIONS IN TRANSITION-METAL COMPOUNDS [J].
ADLER, D ;
FEINLEIB, J ;
BROOKS, H ;
PAUL, W .
PHYSICAL REVIEW, 1967, 155 (03) :851-+
[3]   THEORY OF SEMICONDUCTOR-TO-METAL TRANSITIONS [J].
ADLER, D ;
BROOKS, H .
PHYSICAL REVIEW, 1967, 155 (03) :826-+
[4]  
ADLER D, 1967, PHYS REV, V155, P841
[5]   STUDIES ON VANADIUM OXIDES .2. THE CRYSTAL STRUCTURE OF VANADIUM DIOXIDE [J].
ANDERSSON, G .
ACTA CHEMICA SCANDINAVICA, 1956, 10 (04) :623-628
[6]  
ARIA SM, 1960, SOV PHYS SOLID STATE, V2, P1166
[7]  
ARIA SM, 1960, Z ANORG ALLGEM CHEM, V305, P121
[8]   EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O3 [J].
AUSTIN, IG .
PHILOSOPHICAL MAGAZINE, 1962, 7 (78) :961-+
[9]   ANISOTROPY OF THE ELECTRICAL CONDUCTIVITY OF VO(2) SINGLE CRYSTALS [J].
Bongers, P. F. .
SOLID STATE COMMUNICATIONS, 1965, 3 (09) :275-277
[10]   A NEW TYPE SEMICONDUCTOR ( CRITICAL TEMPERATURE RESISTER ) [J].
FUTAKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) :28-+
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