A TIME-INTEGRATING ACOUSTOOPTIC SPECTRUM ANALYZER UTILIZING A SEMICONDUCTOR-LASER AND A CCD PHOTODETECTOR

被引：0
|
作者：
ESEPKINA, NA
BONDARTSEV, SY
EVTIKHIEV, NN
LAVROV, AP
PEREPELITSA, VV
机构：
来源：
KVANTOVAYA ELEKTRONIKA | 1988年 / 15卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：847 / 849
页数：3
相关论文
共 50 条
  • [41] ACOUSTOOPTIC SNAPSHOT PROM - REAL-TIME OPTICAL-SIGNAL SPECTRUM ANALYZER
    SPRAGUE, RA
    APPLIED OPTICS, 1978, 17 (17): : 2762 - 2767
  • [42] JOINT TRNSFORM TIME-INTEGRATING ACOUSTO-OPTIC CORRELATOR FOR CHIRP SPECTRUM ANALYSIS.
    Guilfoyle, P.S.
    Hecht, D.L.
    Steinmetz, D.L.
    Proceedings of the Society of Photo-Optical Instrumentation Engineers, 1980, 202 : 154 - 116
  • [43] Direction finding on spread spectrum signals using a time-integrating acousto-optic correlator.
    Houghton, AW
    Reeve, CD
    ADVANCES IN OPTICAL INFORMATION PROCESSING VII, 1996, 2754 : 65 - 74
  • [44] EXPERIMENTAL-OBSERVATION OF TIME JITTER IN SEMICONDUCTOR-LASER TURN-ON
    SPANO, P
    DOTTAVI, A
    MECOZZI, A
    DAINO, B
    APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2203 - 2204
  • [45] TECHNIQUE FOR MEASURING TRUE TIME-RESOLVED SPECTRA OF A SEMICONDUCTOR-LASER
    HENNING, I
    ELECTRONICS LETTERS, 1982, 18 (09) : 368 - 369
  • [46] INFLUENCE OF BIREFRINGENCE INDUCED BY MAGNETIC-FIELD ON SEMICONDUCTOR-LASER EMISSION-SPECTRUM
    VOITOVICH, AP
    GRIBKOVSKII, VP
    PAVLYUSHCHIK, AA
    PAK, GT
    RYABTSEV, GI
    YASHUMOV, IV
    KVANTOVAYA ELEKTRONIKA, 1977, 4 (05): : 1128 - 1132
  • [47] ELECTRON-BEAM-EXCITED SEMICONDUCTOR-LASER UTILIZING ZNSE-ZNS WAVEGUIDE STRUCTURE
    PETUKHOV, VS
    PECHYEOV, AN
    TALENSKY, ON
    KHALIMON, MM
    KVANTOVAYA ELEKTRONIKA, 1978, 5 (03): : 682 - 684
  • [48] TUNABLE SEMICONDUCTOR-LASER UTILIZING GAXIN1-XASYSB1-Y QUARTERNARY COMPOUNDS
    AKIMOV, YA
    BUROV, AA
    ZAGARINSKII, EA
    KRYUKOVA, IV
    LESKOVICH, VI
    MATVEENKO, EV
    STEPANOV, BM
    KVANTOVAYA ELEKTRONIKA, 1980, 7 (03): : 644 - 646
  • [49] LOCKING RANGE, PHASE NOISE AND POWER SPECTRUM OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LIDOYNE, O
    GALLION, P
    CHABRAN, C
    DEBARGE, G
    IEE PROCEEDINGS-J OPTOELECTRONICS, 1990, 137 (03): : 147 - 154
  • [50] TEMPERATURE RISE AND THERMAL RISE-TIME MEASUREMENTS OF A SEMICONDUCTOR-LASER DIODE
    ABDELKADER, HI
    HAUSIEN, HH
    MARTIN, JD
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (03): : 2004 - 2007
12345