NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON

被引:52
作者
BARON, R
BAUKUS, JP
ALLEN, SD
MCGILL, TC
YOUNG, MH
KIMURA, H
WINSTON, HV
MARSH, OJ
机构
[1] Hughes Research Laboratories, Malibu, CA 90265
关键词
D O I
10.1063/1.90772
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strong evidence is presented that the X-level defect, which produces a 0.111-eV acceptor level in Si: In, is a substitional In-substitutional C (Ins-Cs) pair. The concentration of this defect follows a mass-action law with the In and C concentrations, the association constant being (1.4±0.3) ×10-19 cm-3 at 650°C. Reversible changes in the X-level concentration between anneal temperatures of 650 and 850°C are observed, and a pair binding energy of 0.7±0.1 eV is estimated. The electronic properties and temperature dependence of the concentration of this center are found to be those expected for a nearest-neighbor Ins-Cs pair.
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页码:257 / 259
页数:3
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