3-MASK SELF-ALIGNED MOS TECHNOLOGY

被引：0
|
作者：
MAI, CC [1 ]
CHAN, TC [1 ]
PALMER, RB [1 ]
机构：
[1] MOSTEK CORP,WORCESTER,MA 01606
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 12期
关键词：
D O I：
10.1109/T-ED.1973.17813
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1162 / 1164
页数：3
相关论文
共 50 条
  • [21] Mask Defect Printability in the Self-Aligned Quadruple Patterning (SAQP) process
    Furubayashi, Ken
    Sho, Koutarou
    Miyoshi, Seiro
    Yamaguchi, Shinji
    Iida, Kazunori
    Usui, Satoshi
    Morisaki, Tsuyoshi
    Sato, Naoki
    Mukai, Hidefumi
    OPTICAL MICROLITHOGRAPHY XXIX, 2016, 9780
  • [22] SELF-ALIGNED PHASE-SHIFTING MASK FOR CONTACT HOLE FABRICATION
    TODOKORO, Y
    WATANABE, H
    HIRAI, Y
    NOMURA, N
    INOUE, M
    MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) : 131 - 134
  • [23] A scalable self-aligned contact NOR flash technology
    Wei, M.
    Banerjee, R.
    Zhang, L.
    Masad, A.
    Reidy, S.
    Ahn, J.
    Chao, H.
    Lim, C.
    Castro, T.
    Karpenko, O.
    Ru, M.
    Fastow, R.
    Brand, A.
    Guo, X.
    Gorman, J.
    McMahon, W. J.
    Woo, B. J.
    Fazio, A.
    2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 226 - +
  • [24] Self-aligned Technology Applied to Planar Power MOSFETs
    M. A. Korolev
    A. V. Shvets
    R. D. Tikhonov
    Russian Microelectronics, 2003, 32 (1) : 11 - 13
  • [25] WSiN self-aligned GaAs-MESFET technology
    Yamane, Y
    Yamasaki, K
    Hyuga, F
    Tokumitsu, M
    NTT REVIEW, 1996, 8 (06): : 26 - 31
  • [26] Advanced patterning solutions for Self-Aligned MOS structures in flash memory
    Yeh, EK
    Howard, BJ
    McGarvey, G
    Hill, E
    Freidjung, I
    Lane, M
    ISSM 2005: IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings, 2005, : 442 - 445
  • [27] A MOS-TRANSISTOR WITH SELF-ALIGNED POLYSILICON SOURCE-DRAIN
    HUANG, TY
    WU, IW
    CHEN, JY
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 314 - 316
  • [28] Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning
    Vincent, Benjamin
    Franke, Joern-Holger
    Juncker, Aurelie
    Lazzarino, Frederic
    Murdoch, Gayle
    Halder, Sandip
    Ervin, Joseph
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IX, 2018, 10583
  • [29] Implementation of fully self-aligned bottom-gate MOS transistor
    Zhang, SD
    Han, RQ
    Zhang, ZK
    Huang, R
    Ko, PK
    Chan, MS
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) : 618 - 620
  • [30] NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE.
    Kaneko, Hiroko
    Koyanagi, Mitsumasa
    Shimizu, Shinji
    Kubota, Yukiko
    Kishino, Seigo
    IEEE Transactions on Electron Devices, 1986, ED-33 (11) : 1702 - 1709
12345