ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：117

作者：

KAMATA, A

MITSUHASHI, H

FUJITA, H

机构：

[1] Materials and Devices Research Labs, Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origin of nitrogen acceptor compensation in ZnSe:N has been studied by secondary ion mass spectrometry (SIMS) and infrared absorption (FTIR) measurements. Nitrogen-doped ZnSe layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ammonia gas was used as a nitrogen source. SIMS analysis has revealed that hydrogen was incorporated only into the ZnSe:N layer with the same concentration as nitrogen. FTIR measurements at 11 K strongly suggest the presence of N-H bonding at 3193 cm-1. It is concluded that hydrogen passivation is responsible for the acceptor compensation.

引用

页码：3353 / 3354

页数：2

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