THE ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY IN THE PRESENCE OF CARRIER TRAPPING - APPLICATION TO POLYCRYSTALLINE SILICON

被引：7

作者：

LOURENCO, MA

HOMEWOOD, KP

MCLELLAN, RD

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV COLL WALES,DEPT PHYS,ABERYSTWYTH SY23 3BZ,WALES

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.354055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The analysis of photoconductive frequency-resolved spectroscopy is developed for variable temperature measurements. It is shown that when the excess carrier kinetics is dominated by carrier trapping the technique can be used to obtain the major trap parameters. This analysis is applied as an example to polycrystalline silicon on insulator on silicon films and a dominant trap with an activation energy of 70 meV is identified.

引用

页码：2958 / 2964

页数：7

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