EFFECT OF TRAP TUNNELING ON THE PERFORMANCE OF LONG-WAVELENGTH HG1-XCDXTE PHOTO-DIODES

被引:77
作者
WONG, JY
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D O I
10.1109/T-ED.1980.19818
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:48 / 57
页数:10
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共 23 条
[1]  
ANDREWS AM, 1978, IEDM TECH DIG, P505
[2]  
BARBE DF, 1977, ELECTROOP SYS DE APR, P50
[3]  
BLAKEMORE JS, 1960, SEMICONDUCTOR STATIS
[4]  
BRIGGS RJ, 1978, F3361577C5197 CONTR
[5]  
BROOKS H, 1955, ADV ELECTRONICS ELEC
[6]  
BUSS DD, 1978, IEDM TECH DIG, P496
[7]  
HOENDERVOOGT RM, 1978, IEEE INT ELECTRON DE, P510
[8]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[9]   INSB CHARGE-INJECTION DEVICE IMAGING ARRAY [J].
KIM, JC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :232-241
[10]   RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE [J].
KINCH, MA ;
BRAU, MJ ;
SIMMONS, A .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1649-1663