A METHOD TO EVALUATE THE 2ND BREAKDOWN RESISTANCE OF POWER TRANSISTORS

被引：1
作者：
SASAYAMA, T
机构：
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1980年 / 29卷 / 01期
关键词：
D O I：
10.1109/TIM.1980.4314861
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：48 / 51
页数：4
相关论文
共 14 条
[1]  
BLACKBURN DL, 1977, 1977 IEEE POW EL SPE, P17
[2]  
FORD GM, 1963, SOLID STATE DESIGN, V4, P29
[3]  
Hower Philip L., 1976, 1976 IEEE Power Electronics Specialists Conference, P234, DOI 10.1109/PESC.1976.7072923
[4]   AVALANCHE INJECTION AND SECOND BREAKDOWN IN TRANSISTORS [J].
HOWER, PL ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :320-+
[5]   BOUNDARY-CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE 2ND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS [J].
KOYANAGI, K ;
HANE, K ;
SUZUKI, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :672-678
[6]   THERMAL CHARACTERIZATION OF POWER TRANSISTORS [J].
OETTINGER, FF ;
BLACKBURN, DL ;
RUBIN, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :831-838
[7]  
OETTINGER FF, 1972, 10TH IEEE ANN P REL, P12
[8]  
SASAYAMA T, 1967, HITACHI HYORON, V49, P1184
[9]  
SASAYAMA T, 1975, MAR ANN M IECS JAP
[10]  
SASAYAMA T, 1977, MAR ANN M IECS JAP
12