NON-DESTRUCTIVE ANALYSIS OF SI3N4-SIO2-SI STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY

被引：24
作者：
THEETEN, JB
ASPNES, DE
SIMONDET, F
ERMAN, M
MURAU, PC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期
关键词：
D O I：
10.1063/1.328633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：6788 / 6797
页数：10
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共 29 条
[1]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[2]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[3]   DIELECTRIC FUNCTION OF SI-SIO2 AND SI-SI3N4 MIXTURES [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4928-4935
[4]   METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS [J].
ASPNES, DE ;
STUDNA, AA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) :291-297
[5]  
BALK P, 1980, 8TH P INT VAC C CA S, V201, P525
[6]   Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].
Bruggeman, DAG .
ANNALEN DER PHYSIK, 1935, 24 (07) :636-664
[7]   OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].
CHANG, CC ;
BOULIN, DM .
SURFACE SCIENCE, 1977, 69 (02) :385-402
[8]   PROPERTIES OF ANODIC OXIDE-FILMS FORMED IN ANODIZATION OF SILICON-NITRIDE [J].
DELLOCA, CJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1225-1230
[9]   NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS [J].
DELORD, JF ;
SCHROTT, AG ;
FAIN, SC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :517-520
[10]   PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].
DONG, D ;
IRENE, EA ;
YOUNG, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823
123