OPTICAL AND ELECTRICAL-PROPERTIES OF HYDROGEN-PASSIVATED GALLIUM ANTIMONIDE

被引：15

作者：

DUTTA, PS ^{[1
]}

SANGUNNI, KS ^{[1
]}

BHAT, HL ^{[1
]}

KUMAR, V ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110054,INDIA

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.51.2153

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of hydrogen-plasma passivation on the optical and electrical properties of gallium antimonide bulk single crystals is presented. Fundamental changes of the radiative recombination after hydrogenation in undoped, zinc-doped, tellurium-doped, and codoped (with Zn and Te) GaSb are reported. The results of optical measurements indicate that passivation of acceptors is more efficient than that of the donors and, in general, the passivation efficiency depends on the doping level. Passivation of deep nonradiative centers is reflected by the gain of photoluminescence intensity and decrease in deep-level transient spectroscopy peak height. Extended defects like grain boundaries and dislocations have also been found to be passivated. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level. The kinetics of thermally released hydrogen in the bulk has been studied by reverse-bias annealing experiments. © 1995 The American Physical Society.

引用

页码：2153 / 2158

页数：6

共 21 条

[1] REVERSE-BIAS ANNEALING KINETICS OF MG-H COMPLEXES IN INP [J].