DETERMINATION OF SURFACE STATE DENSITY IN TUNNEL MOS DEVICES FROM CURRENT-VOLTAGE CHARACTERISTIC

被引：12

作者：

WALKER, LG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 07期

关键词：

D O I：

10.1016/0038-1101(74)90103-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：763 / 765

页数：3

相关论文

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[2] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
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