PHOTOELECTRONIC EFFECTS IN AMORPHOUS-SILICON BASED ALLOYS

被引：16

作者：

HACK, M

MADAN, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：272 / 274

页数：3

共 11 条

[1] STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS [J].

COHEN, JD ;

LANG, DV ;

HARBISON, JP ;

SERGENT, AM .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :371-374

[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[3] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[4] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H [J].

GUHA, S ;

NARASIMHAN, KL ;

NAVKHANDEWALA, RV ;

PIETRUSZKO, SM .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :572-573

[5] INVESTIGATION OF PHOTOINDUCED EFFECTS IN RF-SPUTTERED A-SI [J].

HACK, MG ;

MILNE, WI .

THIN SOLID FILMS, 1981, 76 (02) :195-200

[6] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J].

JOUSSE, D ;

BASSET, R ;

DELIONIBUS, S ;

BOURDON, B .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :208-211

[7]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[8] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

[9]

RHODERICK EH, 1979, METAL SEMICONDUCTOR, P8

[10] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

← 1 2 →