THEORETICAL CONSIDERATIONS ON ION CHANNELING EFFECT THROUGH SILICIDE-SILICON INTERFACE

被引：34

作者：

ISHIWARA, H

SAITOH, S

HIKOSAKA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 848

页数：6

共 14 条

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