SURFACE-STRUCTURE OF INAS (001) TREATED WITH (NH4)2SX SOLUTION

被引：32
作者：
KATAYAMA, M
AONO, M
OIGAWA, H
NANNICHI, Y
SUGAHARA, H
OSHIMA, M
机构：
[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 5A期
关键词：
(NH4)2SX TREATMENT; SURFACE STRUCTURE; INAS; COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; LOW-ENERGY ELECTRON DIFFRACTION; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;
D O I：
10.1143/JJAP.30.L786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface structure of (NH4)2S(x)-treated InAs (001) was studied by means of coaxial impact collision ion scattering spectroscopy (CAICISS) and low-energy electron diffraction (LEED). These observations revealed that arsenic atoms at the outermost surface are partially replaced by sulfur atoms. Significantly, the (2 x 1) reconstruction of the (NH4)2S(x)-treated surface with heat treatment at 380-degrees-C is described by the formation of dimers lined up in [11BAR0] direction. This surface model is supported by the data obtained by synchrotron radiation photoemission spectroscopy (SRPES).
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收藏
页码：L786 / L789
页数：4
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