PHOSPHOSILICATE GLASS STABILIZATION OF MOS STRUCTURES

被引：11

作者：

KAPLAN, LH

LOWE, ME

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 10期

关键词：

D O I：

10.1149/1.2407803

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1649 / &

共 10 条

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[3]

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ELDRIDGE JM, 1968, OCT EL SOC FALL M MO, P530

[5] STABILIZATION OF MOS DEVICES [J].

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[7]

MONTILLO FJ, UNPUBLISHED WORK

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OROURKE G, UNPUBLISHED WORKS

[9] POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON [J].

SNOW, EH ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :263-&

[10]

YON E, 1966, IEEE T ELECTRON DEV, VED13, P276

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