CONDUCTANCE PEAKS PRODUCED BY KONDO SCATTERING FROM O2 IN M-I-M TUNNEL-JUNCTIONS

被引:15
作者
BERMON, S
SO, CK
机构
关键词
D O I
10.1016/0038-1098(78)90011-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:723 / 726
页数:4
相关论文
共 11 条
[1]   INTERFACE EFFECTS IN NORMAL METAL TUNNELING [J].
APPELBAU.JA ;
BRINKMAN, WF .
PHYSICAL REVIEW B, 1970, 2 (04) :907-&
[2]   ZERO-BIAS CONDUCTANCE-PEAK ANOMALY OF TA-I-AL TUNNEL JUNCTIONS AT 0.3 K AND 90 KG [J].
APPELBAUM, JA ;
SHEN, LYL .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :544-+
[3]   ULTRAHIGH MAGNETIC-FIELD STUDY OF KONDO-TYPE ZERO-BIAS CONDUCTANCE PEAK IN MAGNETICALLY DOPED METAL-INSULATOR-METAL TUNNEL-JUNCTIONS [J].
BERMON, S ;
PARASKEVOPOULOS, DE ;
TEDROW, PM .
PHYSICAL REVIEW B, 1978, 17 (05) :2110-2123
[4]   DETERMINATION OF KONDO SCATTERING-AMPLITUDE AND COHERENCE DISTANCE FROM TUNNELING IN DOPED-ELECTRODE JUNCTIONS [J].
BERMON, S ;
SO, CK .
PHYSICAL REVIEW LETTERS, 1978, 40 (01) :53-56
[5]   ZERO-BIAS-ANOMALY IN DOPED M-O-M TUNNEL JUNCTIONS - EFFECT OF IMPURITY INTERACTION [J].
BERMON, S ;
WARE, M .
PHYSICS LETTERS A, 1971, A 35 (04) :226-&
[6]   RESISTANCE MINIMUM IN DILUTE MAGNETIC ALLOYS [J].
KONDO, J .
PROGRESS OF THEORETICAL PHYSICS, 1964, 32 (01) :37-+
[7]   ZERO BIAS ANOMALIES PRODUCED BY CONTROLLED AMOUNTS OF CR IN A1-I-A1 TUNNEL JUNCTIONS [J].
NIELSEN, P .
SOLID STATE COMMUNICATIONS, 1969, 7 (19) :1429-&
[8]   Conductance changes produced by the controlled addition of foreign atoms to the barrier of Al-insulator-metal tunnel junctions [J].
Nielsen, Paul .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :3819-3833
[9]   ZERO-BIAS TUNNELING ANOMALIES - TEMPERATURE VOLTAGE AND MAGNETIC FIELD DEPENDENCE [J].
SHEN, LYL ;
ROWELL, JM .
PHYSICAL REVIEW, 1968, 165 (02) :566-&
[10]   3D TRANSITION-ELEMENTS IN TUNNEL-JUNCTIONS [J].
WYATT, AFG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (07) :1303-1317