OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON

被引：82
作者：
PATEL, JR
JACKSON, KA
REISS, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期
关键词：
D O I：
10.1063/1.323558
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5279 / 5288
页数：10
相关论文
共 20 条
[1]  
[Anonymous], QUANTITATIVE STEREOL
[2]   X-RAY TOPOGRAPHIC DETERMINATION OF INTRINSIC OR EXTRINSIC NATURE OF STACKING-FAULTS [J].
AUTHIER, A ;
PATEL, JR .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01) :213-222
[3]   SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].
BEAN, AR ;
NEWMAN, RC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&
[4]   PRECIPITATION OF OXYGEN IN SILICON [J].
FREELAND, PE ;
JACKSON, KA ;
LOWE, CW ;
PATEL, JR .
APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33
[5]  
FREELAND PE, UNPUBLISHED
[6]   METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+
[7]   THE SOLUBILITY OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) :214-216
[8]   OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].
KAISER, W ;
KECK, PH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887
[9]   CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J].
MAHER, DM ;
STAUDINGER, A ;
PATEL, JR .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3813-3825
[10]   SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J].
MASTERS, BJ ;
FAIRFIELD, JM .
APPLIED PHYSICS LETTERS, 1966, 8 (11) :280-+
12