PROPERTIES AND APPLICATIONS OF ION-IMPLANTED FILMS

被引：25
作者：
STEPHENS, KG
WILSON, IH
机构：
来源：
THIN SOLID FILMS | 1978年 / 50卷 / MAY期
关键词：
D O I：
10.1016/0040-6090(78)90119-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：325 / 347
页数：23
相关论文
共 61 条
[11]   REACTIVE ION-BOMBARDMENT OF TANTALUM THIN-FILM RESISTORS [J].
DEERY, M ;
GOH, KH ;
STEPHENS, KG ;
WILSON, IH .
THIN SOLID FILMS, 1973, 17 (01) :59-66
[12]   ION-IMPLANTATION DOPING OF COMPOUND SEMICONDUCTORS [J].
DEGEN, PL .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01) :9-42
[13]   AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J].
DENNIS, JR ;
HALE, EB .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04) :219-225
[14]  
DUCKWORTH RG, 1977, U SURREY INT REP
[15]   FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J].
DYLEWSKI, J ;
JOSHI, MC .
THIN SOLID FILMS, 1976, 35 (03) :327-336
[16]   FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION [J].
EDELMAN, FL ;
KUZNETSOV, ON ;
LEZHEIKO, LV ;
LUBOPYTOVA, EV .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01) :13-15
[17]  
EDURIN RP, 1973, J PHYS D, V6, P223
[18]   Theory of the adsorption and related occurrences [J].
Frenkel, J .
ZEITSCHRIFT FUR PHYSIK, 1924, 26 :117-138
[19]  
GERASIMENKO NN, 1974, SOV PHYS SEMICOND+, V7, P1461
[20]   MOS MEASUREMENT OF OXYGEN RECOILS FROM AS IMPLANTATION INTO SILICON DIOXIDE [J].
GOETZBERGER, A ;
BARTELINK, DJ ;
MCVITTIE, JP ;
GIBBONS, JF .
APPLIED PHYSICS LETTERS, 1976, 29 (04) :259-261
1234567