DIRECT LIQUID INJECTION MOCVD OF HIGH-QUALITY PLZT FILMS

被引：28
作者：
TAO, W
DESU, SB
LI, TK
机构：
[1] Department of Materials Science and Engineering, Virginia Polytechnic Institute, State University, Blacksburg
来源：
MATERIALS LETTERS | 1995年 / 23卷 / 4-6期
关键词：
D O I：
10.1016/0167-577X(95)00032-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High quality lanthanum-modified lead zirconate titanate (PLZT) films have been deposited on (111) Pt/Ti/SiO2/Si substrates by direct liquid injection (DLI) metal-organic chemical vapor deposition (MOCVD). The as-deposited PLZT films have smooth, reflective surfaces which were characterized by scanning electron microscopy and variable angle spectroscopic ellipsometry. X-ray diffraction (XRD) measurements indicated that single perovskite phase with a-axis oriented PLZT films were formed in situ at a substrate temperature of 650 degrees C. Typical P-E hysteresis loop exhibits remanent polarization as high as 2P(r)=48.1 mu C/cm(2). The coercive field is 2E(c)=98 kV/cm. Electrical fatigue tests show 70% of the original switched polarization remained after 1 x 10(10) cycles.
引用
收藏
页码：177 / 180
页数：4
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