EVIDENCE FOR A MOBILITY EDGE IN INVERSION LAYERS

被引：39
作者：
STERN, F [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1974年 / 9卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.9.2762
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2762 / 2765
页数：4
相关论文
共 44 条
[1]   LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J].
ABRAM, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :L379-L381
[2]  
ARNOLD E, 1973, B AM PHYS SOC, V18, P1605
[3]   IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS [J].
BERZ, F .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :903-&
[4]   SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES [J].
BREWS, JR .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2306-&
[5]  
CHEN JTC, 1973, J APPL PHYS, V45, P828
[6]   BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].
DISTEFAN.TH .
APPLIED PHYSICS LETTERS, 1971, 19 (08) :280-&
[7]   INTERFACE IMAGING BY SCANNING INTERNAL PHOTOEMISSION [J].
DISTEFANO, TH ;
VIGGIANO, JM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1974, 18 (02) :94-99
[8]   HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].
FANG, FF ;
FOWLER, AB .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+
[9]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[10]   MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].
FOWLER, AB ;
FANG, FF ;
HOWARD, WE ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&
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