TECHNOLOGY FOR MONOLITHIC HIGH-POWER INTEGRATED-CIRCUITS USING POLYCRYSTALLINE SI FOR COLLECTOR AND ISOLATION WALLS

被引：8

作者：

KOBAYASHI, I ^{[1
]}

机构：

[1] SONY CORP, RES CTR, HODOGAYA, YOKOHAMA, JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1973.17662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：399 / 404

页数：6

共 6 条

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COLMAN, D .

[2] NEW TECHNOLOGY FOR HIGH-POWER IC [J].

KOBAYASHI, I .

MAI, CC ;

WHITEHOUSE, TS ;

THOMAS, RC ;

GOLDSTEIN, DR .

MENDELSON, S .

[5] DIFFUSION ALONG SMALL-ANGLE GRAIN BOUNDARIES IN SILICON [J].

QUEISSER, HJ ;

HUBNER, K ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1961, 123 (04) :1245-&

[6] EFFECTS OF SUBSTRATE ORIENTATION ON EPITAXIAL GROWTH [J].

TUNG, SK .