A NEW THEORETICAL APPROACH FOR THE QUANTUM-WELL SEMICONDUCTOR-LASER

被引：10
作者：
TAYLOR, GW [1 ]
机构：
[1] AT&T BELL LABS, HOLMDEL, NJ 07733 USA
来源：
PROGRESS IN QUANTUM ELECTRONICS | 1992年 / 16卷 / 02期
关键词：
D O I：
10.1016/0079-6727(92)90001-C
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：73 / 133
页数：61
相关论文
共 62 条
[1]   BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].
ADAMS, AR .
ELECTRONICS LETTERS, 1986, 22 (05) :249-250
[2]  
Agrawal G., 1986, LONG WAVELENGTH SEMI
[3]   THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].
ARAKAWA, Y ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (10) :1666-1674
[4]   SPONTANEOUS EMISSION FACTOR OF A MICROCAVITY DBR SURFACE-EMITTING LASER [J].
BABA, T ;
HAMANO, T ;
KOYAMA, F ;
IGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1347-1358
[5]   QUANTUM-WELL WIDTH AND IN COMPOSITION EFFECTS ON THE OPERATING CHARACTERISTICS OF INGAAS/GAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS [J].
BENMICHAEL, R ;
FEKETE, D ;
SARFATY, R .
APPLIED PHYSICS LETTERS, 1991, 59 (25) :3219-3221
[6]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[7]   CAVITY LENGTH DEPENDENCE OF THE WAVELENGTH OF STRAINED-LAYER INGAAS/GAAS LASERS [J].
CHEN, TR ;
ZHUANG, YH ;
ENG, LE ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1990, 57 (23) :2402-2403
[8]  
CHEN TR, 1990, IEEE J QUANTUM ELECT, V26, P1691
[9]   INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY [J].
CHOI, HK ;
WANG, CA .
APPLIED PHYSICS LETTERS, 1990, 57 (04) :321-323
[10]  
CLAISSE PR, IN PRESS IEEE T ELEC
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