ION PAIRING IN SILICON

被引：22
作者：
MAITA, JP
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1958年 / 4卷 / 1-2期
关键词：
D O I：
10.1016/0022-3697(58)90195-1
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：68 / 70
页数：3
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[5]   CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].
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