GAAS AND IN0.53GA0.47AS MIS STRUCTURES HAVING AN ULTRATHIN PSEUDOMORPHIC INTERFACE CONTROL LAYER OF SI PREPARED BY MBE

被引：81
作者：
HASEGAWA, H
AKAZAWA, M
MATSUZAKI, KI
ISHII, H
OHNO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期
关键词：
D O I：
10.1143/JJAP.27.L2265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L2265 / L2267
页数：3
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