CONTROL OF PINHOLES IN EPITAXIAL COSI2 LAYERS ON SI(111)

被引：63

作者：

TUNG, RT

BATSTONE, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.99393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：648 / 650

页数：3

共 27 条

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[6] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION [J].

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[7]

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[8] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J].

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[9]

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[10]

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