ELASTIC STRAINS IN CDTE-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：52

作者：

OLEGO, DJ ^{[1
]}

PETRUZZELLO, J ^{[1
]}

GHANDHI, SK ^{[1
]}

TASKAR, NR ^{[1
]}

BHAT, IB ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.98590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：127 / 129

页数：3

共 50 条

[31] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

VANDERZIEL, JP ;

DUPUIS, RD ;

LOGAN, RA ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :89-91

[32] A PHOTOLUMINESCENCE STUDY OF HYDROGENATED GAAS GROWN ON AN INP SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SWAMINATHAN, V ;

CHAKRABARTI, UK ;

HOBSON, WS ;

CARUSO, R ;

LOPATA, J ;

PEARTON, SJ ;

LUFTMAN, HS .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) :902-905

[33] PHOTOLUMINESCENCE CHARACTERIZATION OF INGAP/GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

NITTONO, T ;

SUGITANI, S ;

HYUGA, F .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5387-5390

[34] SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

OKAMOTO, K ;

ONOZAWA, S ;

IMAI, T .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2993-2995

[35] PHOTOLUMINESCENCE IDENTIFICATION OF RESIDUAL DONORS IN UNDOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

WATKINS, SP ;

HAACKE, G ;

BURKHARD, H .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :401-403

[36] LOW ETCH PIT DENSITY GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SOGA, T ;

JIMBO, T ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1990, 56 (15) :1433-1435

[37] ZN AND SI DOPING IN (110) GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

OKAMOTO, K ;

FURUTA, M ;

YAMAGUCHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2121-L2124

[38] CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KUECH, TF ;

POTEMSKI, R ;

CHAPPELL, TI .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1196-1203

[39] MICROPROBE PHOTOLUMINESCENCE MEASUREMENT ON HETEROEPITAXIAL GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KIM, HS ;

LEE, C ;

TAKAI, M ;

NAMBA, S ;

MIN, SK .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (03) :188-191

[40] MULTILAYERS OF HGTE-CDTE GROWN BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

WILLIAMS, LM ;

LU, PY ;

CHU, SNG ;

WANG, CH .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) :295-297

← 1 2 3 4 5 →