STUDY OF EPITAXY BY RHEED (REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION)-TRAXS (TOTAL-REFLECTION ANGLE X-RAY SPECTROSCOPY)

被引：2
作者：
INO, S
机构：
[1] Department of Physics, Graduate School of Science, University of Tokyo, Hongo
来源：
ANALYTICAL SCIENCES | 1995年 / 11卷 / 03期
关键词：
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X-RAY SPECTROSCOPY; EPITAXY; GROWTH MODE;
D O I：
10.2116/analsci.11.539
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
By detecting characteristic X-rays excited during a RHEED (reflection high energy electron diffraction) experiment, a highly sensitive measurement of the adsorbate is possible if the X-ray detector is placed at the critical angle (theta(c)) corresponding to the total reflection of the X-rays. Furthermore, by measuring the glancing angle (theta(g)) dependence, it is possible to analyze the depth distribution of the composition at the surface. The resolution in the depth direction is about 1 ML. By applying these methods to studying the epitaxy of metals (Ag, Au, Sn, Ga and In) on Si(111)-nXm-M surface structures (metal-induced Si(lll) reconstructed surface structures), new growth modes were observed, such as the substitution-atom growth mode, the floating-atom growth mode and some complex growth modes.
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页码：539 / 543
页数：5
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