DEPTH PROFILE OF CONCENTRATION OF DEEP-LEVEL IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE GROWN UNDER VARIOUS ARSENIC VAPOR-PRESSURES

被引：33
作者：
OKAMOTO, H
SAKATA, S
SAKAI, K
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECTR COMMUN LAB, MUSASHINO, TOKYO, JAPAN
[2] UNIV TOKYO, INST IND SCI, MINATO, TOKYO, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期
关键词：
D O I：
10.1063/1.1662347
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1316 / 1326
页数：11
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