THE EFFECT OF GROWTH TEMPERATURE ON PLASTIC RELAXATION OF IN0.2GA0.8AS SURFACE-LAYERS ON GAAS

被引：28

作者：

HOWARD, LK

KIDD, P

DIXON, RH

机构：

[1] Strained-Layer Structures Research Group, Department of Materials Science and Engineering, The University of Surrey, Guildford

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 125卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90341-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single surface layers of In0.2Ga0.8As ranging from 10 nm to 3 mum in thickness have been grown by molecular beam epitaxy (MBE) on GaAs at two growth temperatures, 400-degrees-C and 519-degrees-C. The residual strain of each layer has been obtained from double crystal X-ray diffraction (DCXD) measurements, and the surface morphology observed by differential interference contrast microscopy. The critical thickness is found to be independent of growth temperature. The effects of the change in growth temperature on the surface morphology and the extent of relaxation with varying layer thickness are discussed.

引用

页码：281 / 290

页数：10

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