REACTIVE-ION ETCH RESISTANT POLYSULFONES FOR MICROLITHOGRAPHY

被引：5

作者：

BOWDEN, MJ

GOZDZ, AS

DESIMONE, JM

MCGRATH, JE

ITO, S

MATSUDA, M

机构：

[1] CHISSO CORP,YOKOHAMA,JAPAN

[2] VIRGINIA POLYTECH INST & STATE UNIV,BLACKSBURG,VA 24061

[3] TOHOKU UNIV,SENDAI,MIYAGI 980,JAPAN

来源：

MAKROMOLEKULARE CHEMIE-MACROMOLECULAR SYMPOSIA | 1992年 / 53卷

关键词：

D O I：

10.1002/masy.19920530113

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

The various chemical approaches aimed at improving the reactive-ion etch resistance of poly(olefin sulfone)s are described. Resist systems based on incorporation of RIE-resistant moieties via random copolymerization, blending and block copolymer formation are described and lithographic properties noted.

引用

页码：125 / 137

页数：13

共 22 条

[1]

BOWDEN MJ, 1984, ACS SYM SER, V242, P135

[2] POLY(STYRENE SULFONE) - SENSITIVE ION-MILLABLE POSITIVE ELECTRON-BEAM RESIST [J].