INTRINSIC ELECTRON ACCUMULATION LAYERS ON RECONSTRUCTED CLEAN INAS(100) SURFACES

被引：246

作者：

NOGUCHI, M

HIRAKAWA, K

IKOMA, T

机构：

[1] Institute of Industrial Science, University of Tokyo, Tokyo 106, 7-22-1 Roppongi, Minato-ku

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.66.2243

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structures of clean InAs(100) surfaces have been investigated by in situ high-resolution electron-energy-loss spectroscopy. Intrinsic electron accumulation layers with carrier densities strongly depending on the surface reconstruction are formed on both As-stabilized and In-stabilized surfaces. The correlation between the surface electron densities and the surface reconstructions suggests that electrons in the accumulation layers are induced by the donorlike intrinsic surface states of InAs whose energy spectrum is determined by the surface reconstructions.

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页码：2243 / 2246

页数：4

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